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Fast and compact error correcting scheme for reliable multilevel flash memories

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3 Author(s)
Rossi, D. ; Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy ; Metra, C. ; Ricco, B.

This paper presents a method to reduce area and timing overhead due to the implementation of standard single symbol correcting codes to provide ML flash memories with error correction capability. In particular, the proposed method is based on the manipulation of the parity check matrix which defines a code, which allows one to minimize the matrix weight and the maximum row weight. Furthermore, we show that a minimal increase in the redundancy, with respect to the standard case, allows a further considerable reduction of the impact on the memory access time, as well as on the area overhead due to the error correction circuitry.

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Memory Technology, Design and Testing, 2002. (MTDT 2002). Proceedings of the 2002 IEEE International Workshop on

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