Referenced Items are not available for this document.
In this paper a new model is proposed for gate oxide short defects based on a non-split MOS transistor. Because the MOS is not split, this model allows us to simulate minimum transistors in realistic digital circuits. The construction of the model is presented in detail using a comprehensive and didactic approach. It is demonstrated that the electrical behavior of the proposed model matches in a satisfactory way the defective transistor behavior.
Published in:
Test Workshop, 2002. Proceedings. The Seventh IEEE European
Date of Conference: 2002
- Page(s):
- 15 - 20
- ISSN :
- 1530-1877
- Print ISBN:
- 0-7695-1715-3
- INSPEC Accession Number:
- 7502813
- Digital Object Identifier :
- 10.1109/ETW.2002.1029634
- Product Type:
- Conference Publications
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