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Dynamic Vt SRAM: a leakage tolerant cache memory for low voltage microprocessors

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2 Author(s)
Kim, C.H. ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Roy, K.

This paper presents a Dynamic Vt SRAM (DTSRAM) architecture to reduce the subthreshold leakage in cache memories. The Vt of each cache line is controlled separately by means of body biasing. In order to minimize the energy and delay overhead, a cache line is switched to high Vt only when it is not likely to be accessed anymore. Simulation results from the SimpleScalar framework show that even after considering the energy overhead, the DTSRAM can save 72% of the cache leakage with a performance loss less than 1%. Layout of the DTSRAM shows that the area penalty is minimal.

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Low Power Electronics and Design, 2002. ISLPED '02. Proceedings of the 2002 International Symposium on

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