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A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects

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3 Author(s)
Gunther, N.G. ; Dept. of Electr. Eng., Santa Clara Univ., CA, USA ; Mutlu, A.A. ; Rahman, M.

In this work we develop and demonstrate a novel variational methodology for modeling deep sub-micron (10 nm-100 nm) three-dimensional (3D) MOS devices that includes the important Quantum Mechanical (QM) interface charge confinement effect.

Published in:

Device Research Conference, 2002. 60th DRC. Conference Digest

Date of Conference:

24-26 June 2002

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