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Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation

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6 Author(s)
Nayfeh, H.M. ; Dept. of Electrical & Comput. Eng., MIT, Cambridge, MA, USA ; Hoyt, J.L. ; Leitz, C.W. ; Pitera, A.J.
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Inversion layer mobility measurements in strained-Si n-MOSFETs fabricated using a typical MOSFET process including high temperature steps and with various channel doping concentrations, achieved by boron ion implantation, are compared with co-processed bulk-Si n-MOSFETs. It is found that a near-universal mobility relationship with vertical effective electric field, E/sub eff/, exists for strained-Si and bulk-Si n-MOSFETs for all channel implant doses in this study. Significant mobility enhancement for E/sub eff/ up to 2 MV/cm (1.5-1.7 x) is obtained for channel doping concentrations ranging from 10/sup 17/-6 /spl times/ 10/sup 18/ cm/sup -3/.

Published in:

Device Research Conference, 2002. 60th DRC. Conference Digest

Date of Conference:

24-26 June 2002