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Effects of Nb concentration on photo-electrical properties of Sr1-xLaxNbyTi1-yO3 thin-film resistor

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4 Author(s)
Bin Li ; Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China ; Lai, P.T. ; Huang, M.Q. ; Bin Li

Strontium lanthanum titanate-niobate (SrLaNbxTi1-xO3) thin-film resistors are fabricated on SiO2/Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr1-xLaxNbyTi1-yO3 thin-film resistors and frequency effects on the photosensitivity performance are extensively investigated.

Published in:
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong

Date of Conference: 2002

Page(s):
21 - 25
Print ISBN:
0-7803-7429-0
INSPEC Accession Number:
7456012
Digital Object Identifier :
10.1109/HKEDM.2002.1029148
Product Type:
Conference Publications

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