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The impact of gate-oxide breakdown on SRAM stability

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10 Author(s)
R. Rodriguez ; Dept. d'Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain ; J. H. Stathis ; B. P. Linder ; S. Kowalczyk
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We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.

Published in:

IEEE Electron Device Letters  (Volume:23 ,  Issue: 9 )