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A 23.8-GHz SOI CMOS tuned amplifier

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5 Author(s)
Floyd, B.A. ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; Shi, L. ; Yuan Taur ; Lagnado, I.
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A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1-μm silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source-follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are -45 and -9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. The amplifier draws 53 mA from a 1.5-V supply. The measured on-wafer noise figure is 10 dB, while the input-referred third-order intercept point is -7.8 dBm. The results demonstrate that 0.1-μm CMOS technology may be used for 20-GHz RF applications and suggest even higher operating frequencies and better performance for further scaled technologies

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:50 ,  Issue: 9 )