Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

The study of crystallization acceleration effect of the interface layer for phase-change optical disks

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

From CD to DVD, higher data transfer rate was a difficult property for phase-change optical disks to achieve. A complicated layer structure was developed to achieve high crystallization rate of recording material for high erasing rate. The study of Yamada et al (Jpn. J. Appl. Phys. vol. 37, pt. 1, p. 413, 1998) showed that adding an interface layer can accelerate the crystallization rate of recording materials. For the next generation of HD-DVD, data transfer rate will be even higher than DVD. Higher erasing rate will be required. In this study, we used germanium nitride (GeN), aluminum nitride (AlN) and silicon carbide (SiC) as interface materials to study the crystallization acceleration effect. A disk with ZnS-SiO2 as dielectric layer was used for comparison. The onset time of crystallization rate is affected by the interface layer. Dynamic tester data was collected to compare with the static tester results.

Published in:

Optical Memory and Optical Data Storage Topical Meeting, 2002. International Symposium on

Date of Conference:

2002