Referenced Items are not available for this document.
This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier combines the alternative Class-E mode of operation with a harmonic termination technique that minimizes the insertion loss of matching circuitry to obtain ultrahigh-efficiency operation at X-band. For broad-band Class-E performance, the amplifiers output network employs a transmission line topology to achieve broad-band harmonic terminations while providing the optimal fundamental impedance to shape the output current and voltage waveforms of the device for maximum efficiency performance. As a result, 65% power-added efficiency (PAE) was achieved at 10 GHz. Over the frequency band of 9-11 GHz, the power amplifier achieved 49%-65% PAE, 18-22 dBm of output power, and 8-11 dB gain at 4 V supply. The reported power amplifier achieved what is believed to be the best PAE performance at 10 GHz and the widest bandwidth for a switch-mode design at X-band.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:37
,
Issue:
9
)
Date of Publication: Sep 2002
- Page(s):
- 1126 - 1134
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 7382934
- Digital Object Identifier :
- 10.1109/JSSC.2002.801193
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2003
- Issue Date :
- Sep 2002
- Sponsored by :
- IEEE Solid-State Circuits Society
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