Referenced Items are not available for this document.
In the soft error phenomenon in static RAMs (SRAMs), the mechanism of data upset is more complicated than in dynamic RAMs (DRAMs) because the storage nodes in the memory cells are connected to the power supply via load element. Therefore the critical charge has been evaluated only by computer simulation. The charge which is supplied via load element is estimated analytically, assuming α-particle-induced current being constant. The charge which is fed through the load element contributes to the increase of the critical charge in a 1-kbit emitter-coupled logic (ECL) RAM with a 10-kΩ resistor load. In ECL RAMs or MOS SRAMs with a larger resistor, the contribution of the charge which is fed through the load element is hardly expected, and the critical change in such RAMs is evaluated by the stored charge like DRAMs
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:23
,
Issue:
2
)
Date of Publication: Apr 1988
- Page(s):
- 604 - 605
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 3190700
- Digital Object Identifier :
- 10.1109/4.1028
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1988
- Sponsored by :
- IEEE Solid-State Circuits Society
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