The paper presents a novel experimental method to evaluate AC hot-carrier lifetime of a ring oscillator (RO). By using a series of different stages of ring oscillators (DSROs), the new method allows one to maintain a constant frequency (f0) and obtain a closer value between pulse-to-pulse voltage (Vp-p) and bias condition throughout the RO lifetime testing. These two achievements eliminate the innate flaws in conventional RO hot-carrier test method. Hence, a more reliable AC lifetime of RO is expected
Published in:
Electron Devices, IEEE Transactions on
(Volume:49
,
Issue:
9
)
Date of Publication: Sep 2002