By Topic

Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Brederlow, R. ; Infineon Technologies AG, Munich, Germany ; Weber, W. ; Schmitt-Landsiedel, D. ; Thewes, R.

We investigate the hot-carrier degradation of the 1/f-noise behavior of nand p-MOS transistors under typical bias conditions for analog and RF operation. The mechanisms responsible for the degradation and a model are discussed for both n- and p-MOS devices. A method for lifetime prediction concerning 1/f-noise degradation is presented and consequences for reliability assurance by measures of circuit design are drawn

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 9 )