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Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistors

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4 Author(s)
Hastas, N.A. ; Dept. of Phys., Thessaloniki Univ., Greece ; Dimitriadis, C.A. ; Brini, J. ; Kamarinos, G.

The effects of low gate voltage |Vg| stress (Vg =-2.5 V, Vd=-12 V) and high gate voltage |Vg| stress (Vg=Vd=-12 V) on the stability of short p-channel nonhydrogenated polysilicon TFTs were studied. The degradation mechanisms were identified from the evolution with stress time of the static device parameters and the low-frequency drain current noise spectral density. After low |Vg| stress, transconductance overshoot, kinks in the transfer characteristics, and positive threshold voltage shift were observed. Hot-electron trapping in the gate oxide near the drain end and generation of donor-type interface deep states in the channel region are the dominant degradation mechanisms. After high |Vg| stress, transconductance overshoot and "turn-over" behavior in the threshold voltage were observed. Hot-electron trapping near the drain junction dominates during the initial stages of stress, while channel holes are injected into the gate oxide followed by interface band-tail states generation as the stress proceeds

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Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 9 )