By Topic

Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

We report an interdigitated p-i-n photodetector fabricated on a 1-μm-thick Ge epitaxial layer grown on a Si substrate using a 10-μm-thick graded SiGe buffer layer. A growth rate of 45 Å/s∼60 Å/s was achieved using low-energy plasma enhanced chemical vapor deposition. The Ge epitaxial layer had a threading dislocation density of 105 cm-2 and a rms surface roughness of 3.28 nm. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with a 25×28 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 2.2, 3.5, and 3.8 GHz at bias voltages of -1, -3, and -5 V, respectively. The dark current was 3.2 and 5.0 μA at -3 and -5 V, respectively. This photodetector exhibited an external quantum efficiency of 49% at a wavelength of 1.3 μm.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:38 ,  Issue: 9 )