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An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 1010 cm·Hz12//W.