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Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

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5 Author(s)
Ye, Zhengmao ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Campbell, Joe C. ; Chen, Zhonghui ; Kim, Eui-Tae
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An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 1010 cm·Hz12//W.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:38 ,  Issue: 9 )

Date of Publication:

Sep 2002

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