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High power 660 nm optically pumped semiconductor thin-disk lasers

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9 Author(s)
Linder, Norbert ; OSRAM Opto Semicond., Regensburg, Germany ; Karnutsch, C. ; Luft, J. ; Muller, M.
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Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.

Published in:

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

Date of Conference:

2002