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High frequency Pnp AlGaAs/InGaAs heterojunction bipolar transistor with an ultrathin strained base

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3 Author(s)

High performance Pnp AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) have been fabricated. The transistors have a 300 AA strained InGaAs base, with indium composition linearly graded from 0 to 15%. The cutoff frequency, and maximum oscillation frequency for a transistor with emitter area of 2*8 mu m2 are measured to be 23.3 GHz and 40 GHz, respectively, at a collector current of -10 mA.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 24 )