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High performance Pnp AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) have been fabricated. The transistors have a 300 AA strained InGaAs base, with indium composition linearly graded from 0 to 15%. The cutoff frequency, and maximum oscillation frequency for a transistor with emitter area of 2*8 mu m2 are measured to be 23.3 GHz and 40 GHz, respectively, at a collector current of -10 mA.
Date of Publication: 22 Nov. 1990