By Topic

Investigation of Ga contamination due to analysis by dual beam FIB

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sakata, Takahide ; JEOL Ltd., Tokyo, Japan ; Takahashi, H. ; Sekine, Tetsu

In fabrication of LSI devices, wafer surface cleanness is an important factor related to production yield and reliability of products. A dual beam focused ion beam (FIB) system, which is the FIB integrated with scanning electron microscopy (SEM) function, has become an important tool for yield management. In its typical application, defects are initially observed with SEM and part of them are cut with the FIB to expose their cross sections and then the internal structures are reviewed with SEM and/or scanning ion microscopy (SIM). When the dual beam system is used in a production line, one must pay attention to the contamination due to the primary ion source, namely Ga contamination, and also that due to the sputtered species of device constituent atoms. It is of great concern whether the wafer can be returned back to a production line or not after the analysis. With regard to the Ga contamination, the following two cases should be taken into account: (1) the ion milled wafer, (2) the SEM observed wafer without milling. We have investigated the Ga contamination issue in relation to the dual beam system analysis. In this paper, we have focused more on the spatial resolution.

Published in:

Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the

Date of Conference: