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A study of interaction between electrostatic discharge and hot carrier effect and its effect on protection circuit reliability

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4 Author(s)
I. Manna ; Chartered Semicond. Manuf. Co., Singapore ; P. -Y. Tan ; Y. -C. Tan ; K. -F. Lo

Studied the effect of non-destructive ESD events on hot carrier degradation parameters in an advanced deep submicron technology. Also investigated are two ESD protection strategies (substrate-biased NMOS and source injection technique) and they are shown to have unequal performance from the standpoint of hot-carrier reliability after ESD pre-stress.

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Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the

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