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The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL full width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 μm at 10K. Rapid thermal annealing at 850°C significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850°C was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 μm and a high characteristic temperature of 115 K was achieved at room temperature.