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GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy

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4 Author(s)
Pan, Z. ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Li, L.H. ; Wang, X.Y. ; Lin, Y.W.

The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL full width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 μm at 10K. Rapid thermal annealing at 850°C significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850°C was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 μm and a high characteristic temperature of 115 K was achieved at room temperature.

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Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

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