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Binary TiO2-Ga2O3 thin films were prepared from the sol-gel process. Titanium butoxide and gallium isopropoxide were used as precursor materials. The mixed solution was spun onto the sapphire and silicon substrates at 2500 rpm for 30 s to prepare thin films. The X-Ray Diffraction (XRD) results revealed that the films annealed at a temperature of 500°C for 1 hr is γ-Ga2O3 structure. Scanning Electronic Microscope (SEM) images revealed that the film surface is smooth with grains in a nanometer scale. The film showed good responses to 100 ppm, 1000 ppm and 1% O2 at an operating temperature of 470°C. The resistance of Ga-doped TiO2 film is between the resistances of pure TiO2 and Ga2O3 films. The response of Ga-doped TiO2 thin film is sensitive, fast and stable to oxygen gas.
Date of Conference: 2000