By Topic

Electrical properties of rapid thermally annealed PZT films deposited through a novel sol-gel process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zhang, H.X. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Han, X.Q. ; Liu, D.G. ; Kam, C.H.

Pb(Zr0.52Ti0.48)O3 film has been deposited through a novel sol-gel process on Pt/Ti/SiO2/Si and annealed in a rapid thermal processor at 650°C. The well-crystallized film is very smooth with a roughness of ∼2.0 nm. The remnant polarization Pr (∼28.5 μC/cm2) and coercive field Ec (∼39.8 kV/cm) have been derived from the P-E hysteresis loop. The films have a dielectric constant of ∼1080 and a dielectric loss of ∼0.01 at 1 kHz. A ferroelectric polarization fatigue test of the films has shown a high fatigue resistance up to 3×1010 cycles before Pr is decreased by 50%.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Date of Conference:

2000