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Electrical properties of rapid thermally annealed PZT films deposited through a novel sol-gel process

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4 Author(s)
Zhang, H.X. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Han, X.Q. ; Liu, D.G. ; Kam, C.H.

Pb(Zr0.52Ti0.48)O3 film has been deposited through a novel sol-gel process on Pt/Ti/SiO2/Si and annealed in a rapid thermal processor at 650°C. The well-crystallized film is very smooth with a roughness of ∼2.0 nm. The remnant polarization Pr (∼28.5 μC/cm2) and coercive field Ec (∼39.8 kV/cm) have been derived from the P-E hysteresis loop. The films have a dielectric constant of ∼1080 and a dielectric loss of ∼0.01 at 1 kHz. A ferroelectric polarization fatigue test of the films has shown a high fatigue resistance up to 3×1010 cycles before Pr is decreased by 50%.

Published in:
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Date of Conference: 2000

Page(s):
312 - 315
Print ISBN:
0-7803-6698-0
INSPEC Accession Number:
7468205
Digital Object Identifier :
10.1109/COMMAD.2000.1022951
Product Type:
Conference Publications

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