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X-ray diffraction simulation of strained InGaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy

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2 Author(s)
D. Zhou ; Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic., Australia ; B. F. Usher

We present a simplified X-ray diffraction simulation method for InGaAs/AlGaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy. In this method, an additional relationship between the structural parameters is derived from the MQW growth information. As a result, the number of independent variables is reduced to just one. This represents a significant improvement in the time required to obtain an X-ray dynamical simulation solution for MQW structures.

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Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

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