By Topic

Study of a Cr doped TiO2 derived from sol-gel process for gas sensing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
J. M. Booth ; Departments of Appl. Chem., R. Melbourne Inst. of Technol., Vic., Australia ; L. Nguyen ; C. J. Rix ; D. E. Mainwaring
more authors

The sol-gel route to thin bimetallic oxide sensor films was studied in terms of the evolution of a viscoelastic Ti gel precursor containing occluded Cr. The influence of Cr:Ti atomic ratio and annealing temperature was related to the resultant microstructure, morphology and oxygen sensing response of the annealed thin films. It was shown that progressive increase in Cr content changed the Ti-O properties from a n-type to a p-type semiconductor film with a commensurate reversal in sensor response.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Date of Conference:

2000