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Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors

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7 Author(s)
T. David ; Inst. d'Electronique et de Microelectronique du Nord, Univ. des Sci. et Technol. de Lille, France ; S. Arscott ; J. -M. Munier ; T. Akalin
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Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial liftoff and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz: corresponding to an overall efficiency of 6%. In addition, we have observed a 45-GHz, 3-dB bandwidth centered around 300 GHz for a constant input power of 70 mW.

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IEEE Microwave and Wireless Components Letters  (Volume:12 ,  Issue: 8 )