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Performance evaluation of a Schottky SiC power diode in a boost PFC application

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5 Author(s)
Spiazzi, G. ; Dipt. di Elettronica e Inf., Padova Univ., Italy ; Buso, S. ; Citron, M. ; Corradin, M.
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The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated. A 300 W boost power factor corrector with average current mode control (PFC) is considered as a key application. Measurements of overall efficiency, switch and diode losses and conducted electromagnetic interference (EMI) are performed both with the SiC diode and with two ultra-fast, soft-recovery, silicon power diodes, namely the RURD460 and the recently presented STTH5R06D. The paper compares the results to quantify the impact of the recovery current reduction provided by SiC diode on these key aspects of the converter behavior.

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Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual  (Volume:2 )

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