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ZnCdSeTe-based orange light-emitting diode

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9 Author(s)
Chen, W.R. ; Nat. Cheng Kung Univ., Tainan, Taiwan ; Chang, S.J. ; Su, Y.K. ; Chen, J.F.
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We report the fabrication of orange light-emitting diodes (LEDs) by introducing Te into the well layers of ZnCdSe-ZnSSe multiple quantum-well active region. It was found that a 15% Te can result in a 91 nm photoluminescence (PL) red-shift at 16 K and a 81 nm PL red-shift at room temperature. Such a ZnSe-based orange LED can be integrated easily with conventional ZnSe-based blue-green LED on the same GaAs substrate. Thus, such a ZnSe-based orange LED is potentially useful in realizing a new one-chip type white LED without the use of phosphor.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 8 )

Date of Publication:

Aug. 2002

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