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We report the fabrication of orange light-emitting diodes (LEDs) by introducing Te into the well layers of ZnCdSe-ZnSSe multiple quantum-well active region. It was found that a 15% Te can result in a 91 nm photoluminescence (PL) red-shift at 16 K and a 81 nm PL red-shift at room temperature. Such a ZnSe-based orange LED can be integrated easily with conventional ZnSe-based blue-green LED on the same GaAs substrate. Thus, such a ZnSe-based orange LED is potentially useful in realizing a new one-chip type white LED without the use of phosphor.