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Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography

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6 Author(s)
Bach, L. ; Technische Phys., Wurzburg Univ., Germany ; Rennon, S. ; Reithmaier, J.P. ; Forchel, A.
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By using focused ion beam lithography high performance 1.55-μm emitting distributed Bragg reflector lasers were realized suitable for high-speed optical telecommunication. Threshold currents of 8 mA and continuous-wave efficiencies of 0.37 W/A for 600-μm-long devices were achieved. Stable single-mode emission with sidemode suppression ratios of > 40 dB were observed for the entire operation range. By relative intensity noise measurements an intrinsic 3-dB modulation frequency of > 10 GHz was estimated for a single-mode output power of 23 mW.

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Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 8 )