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Simple and accurate propagation delay model for submicron CMOS gates based on charge analysis

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2 Author(s)
Rossello, J.L. ; Dept. de Fisica, Univ. de les Illes Baleares, Palma de Mallorca, Spain ; Segura, J.

A simple method to evaluate the propagation delay of complex CMOS gates computed from inverter delay models based on the nth-power law MOSFET model is presented. The method is based on a transistor collapsing technique developed for complex gates and takes into account short-channel effects, internal coupling capacitances and the body effect. The propagation delay of complex gates for a 0.18 μm technology is evaluated, showing excellent results

Published in:

Electronics Letters  (Volume:38 ,  Issue: 15 )