By Topic

Trapping effects in GaN and SiC microwave FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Binari, S.C. ; Naval Res. Lab., Washington, DC, USA ; Klein, P.B. ; Kazior, T.E.

It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this paper we review the various trapping phenomena observed in SiC- and GaN-based FETs that contribute to compromised power performance. For both of these material systems, trapping effects associated with both the surface and with the layers underlying the active channel have been identified. The measurement techniques utilized to identify these traps and some of the steps taken to minimize their effects, such as modified buffer layer designs and surface passivation, are described. Since similar defect-related phenomena were addressed during the development of the GaAs technology, relevant GaAs work is briefly summarized.

Published in:

Proceedings of the IEEE  (Volume:90 ,  Issue: 6 )