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AlGaN/GaN HEMTs-an overview of device operation and applications

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3 Author(s)
U. K. Mishra ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; P. Parikh ; Yi-Feng Wu

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

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Proceedings of the IEEE  (Volume:90 ,  Issue: 6 )