Referenced Items are not available for this document.
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.
Published in:
Proceedings of the IEEE
(Volume:90
,
Issue:
6
)
Date of Publication: Jun 2002
- Page(s):
- 1022 - 1031
- ISSN :
- 0018-9219
- INSPEC Accession Number:
- 7354116
- Digital Object Identifier :
- 10.1109/JPROC.2002.1021567
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 November 2002
- Issue Date :
- Jun 2002
- Sponsored by :
- IEEE
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