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Inversion-mode, n-channel 3C-SiC MOSFETs have been fabricated in a 3C-SiC epilayer grown on a 2°-off-axis Si(001) substrate with optimized SiC processing techniques. Phosphorus implantations are employed for source/drain formation and a sheet resistance of 70 Ω per square is obtained after annealing at 1250°C for 30 min in argon. Both drain characteristics and subthreshold characteristics show typical transistor behavior with an effective channel mobility of 165 cm2/Vs. The breakdown field of the gate oxide is about 3.5 MV/cm.