N-channel 3C-SiC MOSFETs on silicon substrate

Inversion-mode, n-channel 3C-SiC MOSFETs have been fabricated in a 3C-SiC epilayer grown on a 2°-off-axis Si(001) substrate with optimized SiC processing techniques. Phosphorus implantations are employed for source/drain formation and a sheet resistance of 70 Ω per square is obtained after annealing at 1250°C for 30 min in argon. Both drain characteristics and subthreshold characteristics show typical transistor behavior with an effective channel mobility of 165 cm
²
/Vs. The breakdown field of the gate oxide is about 3.5 MV/cm.