Referenced Items are not available for this document.
High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.
Published in:
Electron Device Letters, IEEE
(Volume:23
,
Issue:
8
)
Date of Publication: Aug. 2002
- Page(s):
- 470 - 472
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7352468
- Digital Object Identifier :
- 10.1109/LED.2002.801322
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 November 2002
- Issue Date :
- Aug. 2002
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
