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This paper extends transistor-level static noise analysis to consider the unique features of partially depleted silicon-on-insulator (PD-SOI) technology: floating-body-induced threshold voltage variations and parasitic bipolar leakage currents. This involves a unique state-diagram abstraction of the device physics determining the body potential of PD-SOI FETs. Based on this picture, a simple model of the body voltage is derived which takes into account modest knowledge of which nets have dependable regular switching activity. Results are presented using a commercial static noise analysis tool incorporating these extensions and comparisons are made with SPICE.