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A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

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13 Author(s)
Yamada, J. ; NEC Labs., NEC Corp., Kanagawa, Japan ; Miwa, T. ; Koike, H. ; Toyoshima, H.
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This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-/spl mu/m three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10/sup 8/ write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:37 ,  Issue: 8 )

Date of Publication:

Aug 2002

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