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Advanced SPICE modelling of SiGe HBTs using VBIC model

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2 Author(s)
B. Senapati ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; C. K. Maiti

The vertical bipolar intercompany (VBIC) model has been applied to silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating. Several device parameters have been extracted from SiGe HBTs and implemented in the VBIC model. A comparison is made with the SPICE Gummel-Poon model. The usefulness and accuracy of the VBIC model for SiGe HBTs are demonstrated by way of comparison of simulated and measured room temperature device data

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IEE Proceedings - Circuits, Devices and Systems  (Volume:149 ,  Issue: 2 )