Referenced Items are not available for this document.
Charge trapping in the gate oxide and at the interfaces caused by electrical stress may lead to changes of both the oxide field and the shape of tunneling barrier. In this study, a simple technique based on the analysis of a small change in the Fowler-Nordheim (FN) tunneling current has been developed to quantitatively examine the changes of the effective barrier height and the electric field at the tunneling interface. A power-law dependence of the changes of both the barrier height and the electric field on the stress time is observed.
Published in:
Electron Devices, IEEE Transactions on
(Volume:49
,
Issue:
8
)
Date of Publication: Aug 2002
- Page(s):
- 1493 - 1496
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7345243
- Digital Object Identifier :
- 10.1109/TED.2002.801244
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Aug 2002
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
