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Gain calculations for unipolar near infrared intersubband semiconductor laser

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3 Author(s)
Banerjee, S. ; Sch. of Informatics, Univ. of Wales, Bangor, UK ; Barlow, G.F. ; Shore, K.A.

The paper provides a theoretical investigation of the optical gain in a strain compensated InxGa(1-x)As/InyAl(1-y)As intersubband laser. Using a four-level structure in a triple quantum well, a laser is designed to emit radiation in the near infrared (2.8 μm). The effects of anticrossing and coupling are taken into account while designing such a structure, and the optical gain is calculated at temperatures of 100 K and 300 K. It is found that significant gain is obtained even at low current density

Published in:

Optoelectronics, IEE Proceedings -  (Volume:149 ,  Issue: 2 )

Date of Publication:

Apr 2002

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