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A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO3 thin films

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5 Author(s)
Acikel, B. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Taylor, Troy R. ; Hansen, Peter J. ; Speck, James S.
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In this paper, a new device topology has been proposed to implement parallel plate capacitors using Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) thin films. The device layout utilizes a single parallel capacitor and minimizes conductor losses in the base electrode. The new design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-band 180/spl deg/ phase shifter has been implemented using the new device design. The circuit provided 240/spl deg/ phase shift with an insertion loss of only 3 dB at 10 GHz at room temperature. We have shown a figure of merit 93/spl deg//dB at 6.3 GHz and 87/spl deg//dB at 8.5 GHz. To our knowledge, these are the best figure of merit results reported in the literature for distributed phase shifters implemented using BST films at room temperature.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:12 ,  Issue: 7 )