Referenced Items are not available for this document.
High energy implantation becomes increasingly attractive for CMOS and BiCMOS technologies due to significant benefits in performance and cost. This paper reports the electrical and thermal performance of the power devices in a new cost-effective smart power technology based on the high energy implantation process. characteristics in safe operating area and transient power capability of the power devices are investigated in terms of process and geometry optimizations, compared to the conventional implantation technology.
Published in:
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Date of Conference: 2002
- Page(s):
- 221 - 224
- Print ISBN:
- 0-7803-7318-9
- INSPEC Accession Number:
- 7412097
- Digital Object Identifier :
- 10.1109/ISPSD.2002.1016211
- Product Type:
- Conference Publications
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