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Low on-resistance and low feedback-charge, lateral power MOSFETs with multi-drain regions for high-efficient DC/DC converters

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3 Author(s)
Sakamoto, K. ; Res. Lab., Hitachi Ltd., Ibaraki, Japan ; Shiraishi, M. ; Iwasaki, T.

Low on-resistance and low feedback-charge lateral power MOSFETs have been developed. This is achieved by using a new lateral power MOSFET structure with multi-drain regions. The high-efficiency factor Ron·Qgd of the proposed power MOSFETs is improved to less than half that of conventional trench gate power MOSFETs with tens of mΩ of specific on-state resistance, Ron. These new power MOSFETs are useful to improve the power convergent efficiency of DC/DC converters. With these lateral power MOSFETs it is also possible to integrate a CMOS pre-driver in the same chip in order to reduce parasitic gate impedance between the gate of the power MOSFET and the output of CMOS pre-drivers and to achieve high-frequency drive properly.

Published in:

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

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