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Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage

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3 Author(s)
Chen, J.F. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Tsao, C.-P. ; Ong, T.C.

Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage

Published in:

Electronics Letters  (Volume:38 ,  Issue: 13 )