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A SiGe BiCMOS burst-mode 155-Mb/s receiver for PON

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6 Author(s)
S. Brigati ; ACCO Microelettronica S.r.l, Pavia, Italy ; P. Colombara ; L. D'Ascoli ; U. Gatti
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In this paper, we present an integrated 155-Mb/s burst-mode receiver (BMR) for passive optical network (PON) applications. The chip has been designed to receive optical signals over a wide dynamic range (-30 to -8 dBm) and temperature range (-40°C to +85°C). The chip was implemented using a 0.8-μm 35-GHz SiGe BiCMOS technology and occupies an area of 4.3×4.9 mm2 with a power consumption of 500 mW from a supply voltage of 5 V (3.3 V for the digital PECL output). In the receiver analog front end, we used a low-noise wide-band transimpedance amplifier followed by a nonlinear gain stage to cover a wide signal range without changing the transimpedance gain. The circuit dynamically adjusts the receiver threshold voltage through a feedback loop, thus optimizing the pulsewidth distortion and canceling the optical as well as the electrical offset voltages

Published in:

IEEE Journal of Solid-State Circuits  (Volume:37 ,  Issue: 7 )