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Novel resist pattern transfer process for 70 nm technology node using 157-nm lithography

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5 Author(s)
S. Miyoshi ; Adv. Technol. Res. Dept, Semicond. Leading Edge Technol. Inc, Yokohama, Japan ; T. Furukawa ; H. Watanabe ; S. Irie
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A novel resist pattern transfer process for the 70 nm technology node is presented using 157-nm lithography. By using newly developed 157-nm resists and a 157-nm microstepper (NA=0.60), sub-100 nm resist patterns are fabricated. Three types of structures are presented for the pattern transfer process. Two of these are hard mask (HM) processes. and the other is a bi-layer process using Si-containing resist. For all these structures, the underlayers of resist work well as anti-reflecting layers. By optimizing the RIE gas conditions, resist patterns are successfully transferred to the underlayer. Using the HM as an etching mask, sub-100 nm gate patterns are fabricated.

Published in:

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Date of Conference:

11-13 June 2002