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A 1.4 dB insertion-loss, 5 GHz transmit/receive switch utilizing novel depletion-layer-extended transistors (DETs) in 0.18 /spl mu/m CMOS process

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10 Author(s)
Ohnakado, T. ; Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan ; Furukawa, A. ; Ono, M. ; Taniguchi, E.
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A novel depletion-layer-extended transistor (DET) for the RF switch circuit is proposed in a CMOS process, which significantly reduces junction capacitance and increases GND-path resistance in the Si-substrate, with new impurity profiling. This transistor can be simultaneously formed with the conventional transistor with the addition of only one mask-step. By utilizing the DETs, a low 1.4 dB insertion-loss, 5 GHz transmit/receive switch in a 0.18 /spl mu/m CMOS process is realized.

Published in:

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Date of Conference:

11-13 June 2002

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