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A novel depletion-layer-extended transistor (DET) for the RF switch circuit is proposed in a CMOS process, which significantly reduces junction capacitance and increases GND-path resistance in the Si-substrate, with new impurity profiling. This transistor can be simultaneously formed with the conventional transistor with the addition of only one mask-step. By utilizing the DETs, a low 1.4 dB insertion-loss, 5 GHz transmit/receive switch in a 0.18 μm CMOS process is realized.
Date of Conference: 2002