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Advanced CMOS transistors with a novel HfSiON gate dielectric

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14 Author(s)
Rotondaro, A.L.P. ; Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA ; Visokay, M.R. ; Chambers, J.J. ; Shanware, A.
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We report for the first time on short channel transistors fabricated using HfSiON, a new high-k gate dielectric material. HfSiON has superior electrical characteristics such as low leakage current relative to SiO/sub 2/, low interfacial trap density, electron and hole carrier mobilities /spl sim/80% of the universal curve at E/sub eff/>0.8 MV/cm and scalability to equivalent oxide thicknesses of less than 10 /spl Aring/. This material is also thermally stable up to 1100/spl deg/C in contact with poly Si, and exhibits boron blocking significantly better than SiO/sub 2/ and SiON. The results indicate that this material is a promising high-k gate dielectric with good transistor characteristics.

Published in:

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Date of Conference:

11-13 June 2002

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