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Temperature dependence of hot-carrier-induced degradation in 0.1 μm SOI nMOSFETs with thin oxide

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4 Author(s)
Wen-Kuan Yeh ; Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan ; Wen-Han Wang ; Yean-Kuen Fang ; Fu-Liang Yang

This letter investigates hot-carrier-induced degradation on 0.1 μm partially depleted silicon-on-insulator (SOI) nMOSFETs at various ambient temperatures. The thermal impact on device degradation was investigated with respect to body-contact nMOSFETs (BC-SOI) and floating-body SOI nMOSFETs (FB-SOI). Experimental results show that hot-carrier-induced degradation on drive capacity of FB-SOI devices exhibits inverse temperature dependence compared to that of BC-SOI devices. This is attributed to the floating-body effect (FBE) and parasitic bipolar transistor (PBT) effect.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 7 )