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Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologies

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7 Author(s)
Higashi, S. ; Technol. Platform Res. Center, Seiko Epson Corp., Nagano, Japan ; Abe, D. ; Hiroshima, Y. ; Miyashita, K.
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High-performance polycrystalline Si (poly-Si) thin-film transistors (TFTs) were successfully fabricated on a glass substrate below 425/spl deg/C by introducing defect control process technologies. The defects in the laser crystallized poly-Si films were terminated by an oxygen plasma treatment to the film and the defects at the SiO/sub 2//Si interface were controlled by a gate SiO/sub 2/ film formation using electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD). As a result, high n-channel mobility of 309 cm/sup 2/V/sup -1/s/sup -1/, low threshold voltage of 1.12 V and low subthreshold swing of 250 mV/decade were obtained. In addition, it was demonstrated that the defect control process is quite effective to minimize the variation of TFT characteristics.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 7 )

Date of Publication:

July 2002

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