Skip to Main Content
High-performance polycrystalline Si (poly-Si) thin-film transistors (TFTs) were successfully fabricated on a glass substrate below 425/spl deg/C by introducing defect control process technologies. The defects in the laser crystallized poly-Si films were terminated by an oxygen plasma treatment to the film and the defects at the SiO/sub 2//Si interface were controlled by a gate SiO/sub 2/ film formation using electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD). As a result, high n-channel mobility of 309 cm/sup 2/V/sup -1/s/sup -1/, low threshold voltage of 1.12 V and low subthreshold swing of 250 mV/decade were obtained. In addition, it was demonstrated that the defect control process is quite effective to minimize the variation of TFT characteristics.