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Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process

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5 Author(s)
Tzu Yun Chang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Tan Fu Lei ; Tien Sheng Chao ; Huang Chun Wen
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This study describes a novel technique to form low temperature oxide (<350/spl deg/C). Low-temperature oxides were formed by N/sub 2/O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF/sub 4/ pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF/sub 4/ plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 7 )